From e2f6ff4487606f4052b9c912b9faa2c8d8f1ca10 Mon Sep 17 00:00:00 2001 From: Prefetch Date: Sun, 18 Jun 2023 17:59:42 +0200 Subject: Improve knowledge base --- source/know/concept/drude-model/index.md | 6 +++--- 1 file changed, 3 insertions(+), 3 deletions(-) (limited to 'source/know/concept/drude-model') diff --git a/source/know/concept/drude-model/index.md b/source/know/concept/drude-model/index.md index c4faf81..0026d90 100644 --- a/source/know/concept/drude-model/index.md +++ b/source/know/concept/drude-model/index.md @@ -11,7 +11,7 @@ layout: "concept" The **Drude model**, also known as the **Drude-Lorentz model** due to its analogy -to the *Lorentz oscillator model* +to the [Lorentz oscillator model](/know/concept/lorentz-oscillator-model/) classically predicts the [dielectric function](/know/concept/dielectric-function/) and electric conductivity of a gas of free charges, as found in metals and doped semiconductors. @@ -59,7 +59,7 @@ $$\begin{aligned} = - \frac{N q^2}{m (\omega^2 + i \gamma \omega)} \vb{E}(t) \end{aligned}$$ -The electric displacement field $$\vb{D}$$ is then as follows, +The electric displacement field $$\vb{D}(t)$$ is then as follows, where the parenthesized expression is the dielectric function $$\varepsilon_r$$ of the material: @@ -180,7 +180,7 @@ We must replace the carriers' true mass $$m$$ with their *effective mass* $$m^*$ found from the material's electronic band structure. Furthermore, semiconductors already have a high intrinsic dielectric function $$\varepsilon_{\mathrm{int}}$$ -before being doped, so the displacement field $$\vb{D}$$ becomes: +before being doped, so the displacement field $$\vb{D}(t)$$ becomes: $$\begin{aligned} \vb{D} -- cgit v1.2.3