Improve knowledge base

1 files changed, 3 insertions, 3 deletions

diff --git a/source/know/concept/drude-model/index.md b/source/know/concept/drude-model/index.md
index c4faf81..0026d90 100644
--- a/source/know/concept/drude-model/index.md
+++ b/source/know/concept/drude-model/index.md
@@ -11,7 +11,7 @@ layout: "concept"
 
 The **Drude model**, also known as
 the **Drude-Lorentz model** due to its analogy
-to the *Lorentz oscillator model*
+to the [Lorentz oscillator model](/know/concept/lorentz-oscillator-model/)
 classically predicts the [dielectric function](/know/concept/dielectric-function/)
 and electric conductivity of a gas of free charges,
 as found in metals and doped semiconductors.
@@ -59,7 +59,7 @@ $$\begin{aligned}
     = - \frac{N q^2}{m (\omega^2 + i \gamma \omega)} \vb{E}(t)
 \end{aligned}$$
 
-The electric displacement field $$\vb{D}$$ is then as follows,
+The electric displacement field $$\vb{D}(t)$$ is then as follows,
 where the parenthesized expression is the dielectric function
 $$\varepsilon_r$$ of the material:
 
@@ -180,7 +180,7 @@ We must replace the carriers' true mass $$m$$ with their *effective mass* $$m^*$
 found from the material's electronic band structure.
 Furthermore, semiconductors already have
 a high intrinsic dielectric function $$\varepsilon_{\mathrm{int}}$$
-before being doped, so the displacement field $$\vb{D}$$ becomes:
+before being doped, so the displacement field $$\vb{D}(t)$$ becomes:
 
 $$\begin{aligned}
     \vb{D}